| 摘要 |
PURPOSE:To configure the monolithic resonance circuit having been formed as a single circuit integrally with a monolithic microwave circuit for an oscillator and a filter or the like and to facilitate the adjustment of the operating frequency. CONSTITUTION:An SiO2 film is formed to a front side of a semi-insulating GaAs substrate 1 on which a microwave circuit is formed. After a transmission line 6 having a predetermined characteristic impedance is formed on the SiO2 film 2, a circular recessed part 7 is provided to the SiO2 film 2 in the vicinity of the transmission line 6 and a dielectric resonator 9 is fitted thereto. Thus, the miniaturization and the replacement of the dielectric resonator 9 are facilitated. |
