| 摘要 |
<p>PURPOSE:To prevent the electrostatic breakdown of the semiconductor devices in the case of formation of the individual semiconductor devices by using the semiconductor integrated substrate. CONSTITUTION:This semiconductor integrated substrate is composed of a large- sized wafer 11. The surface of the wafer 1 is provided with plural blocks 13 partitioned by dividing lines 12. Active matrix circuits 2 for display are integrated and formed by an ordinary production process for ICs within the respective blocks 13. The wafer is provided with guard ring patterns 10 so as to enclose the individual active matrix circuits 2 for display. Further, the wafer is provided with patterns 14 for connection as well in order to commonly connect the adjacent guard ring patterns 10 to each other via the dividing lines 12. These patterns 14 for connection have open structures 15 for external overcurrents respectively on both sides of the dividing lines 12. These open structures 15 consist of, for example, fuse patterns.</p> |
