发明名称 COMPOSITE INTEGRATED CIRCUIT COMPONENT
摘要 PURPOSE:To achieve high-density mounting by reducing unnecessary processes by compounding a thin-film integrated circuit element and at least one of lamination type inductor or lamination type capacitor and by forming this lamination type capacitor or inductor in a thin film integrated circuit on a substrate. CONSTITUTION:A quartz substrate with a high heat resistance is used, for example, for a substrate 100, and a thin film integrated circuit 101 having a silicon gate type TFT using a silicon material is provided as electric wiring on the substrate 100. A fetch electrode 102 of this thin film integrated circuit is formed on the same substrate 100. A silicon oxide film 109 as a protective film covering this thin film integrated circuit 101 is formed, and a through hole is formed at the portion corresponding to the fetch electrode 102. A capacitor portion 103 and an inductor 104 are provided as a laminated construction on the protective film 109.
申请公布号 JPH06333740(A) 申请公布日期 1994.12.02
申请号 JP19930142882 申请日期 1993.05.21
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKAMOTO NAOYA;YAMAUCHI YUKIO;ARAI MICHIO
分类号 H01F27/00;H01F17/00;H01G4/40;H01L21/822;H01L23/12;H01L25/00;H01L27/04;H01L29/78;H01L29/786;(IPC1-7):H01F15/00;H01L29/784 主分类号 H01F27/00
代理机构 代理人
主权项
地址