发明名称 |
COMPOSITE INTEGRATED CIRCUIT COMPONENT |
摘要 |
PURPOSE:To achieve high-density mounting by reducing unnecessary processes by compounding a thin-film integrated circuit element and at least one of lamination type inductor or lamination type capacitor and by forming this lamination type capacitor or inductor in a thin film integrated circuit on a substrate. CONSTITUTION:A quartz substrate with a high heat resistance is used, for example, for a substrate 100, and a thin film integrated circuit 101 having a silicon gate type TFT using a silicon material is provided as electric wiring on the substrate 100. A fetch electrode 102 of this thin film integrated circuit is formed on the same substrate 100. A silicon oxide film 109 as a protective film covering this thin film integrated circuit 101 is formed, and a through hole is formed at the portion corresponding to the fetch electrode 102. A capacitor portion 103 and an inductor 104 are provided as a laminated construction on the protective film 109. |
申请公布号 |
JPH06333740(A) |
申请公布日期 |
1994.12.02 |
申请号 |
JP19930142882 |
申请日期 |
1993.05.21 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SAKAMOTO NAOYA;YAMAUCHI YUKIO;ARAI MICHIO |
分类号 |
H01F27/00;H01F17/00;H01G4/40;H01L21/822;H01L23/12;H01L25/00;H01L27/04;H01L29/78;H01L29/786;(IPC1-7):H01F15/00;H01L29/784 |
主分类号 |
H01F27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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