| 摘要 |
<p>PURPOSE:To prevent a non-selected cell from bring made to be a weak writing state while preventing erroneous writing. CONSTITUTION:The voltage -7V is applied to a word line W1, 5B to a bit line B1 and a word line W2 and OV to others. As to a non-selected cell C12, since 5V is applied to its control gate electrode, electrons are not pulled back to the drain. Since OV is applied to the source line S, a side wall becomes grouded potential and a channel region is in a non-conductive state. Consequently, the portion between the drain and the source of the cell 12 is in the non- conductive state and the voltage applied to the bit line B1 is not transferred to the source of other non-conductive cell C21. Consequently, the non-conductive cell C12 is prevented from becoming the weak writing state.</p> |
