| 摘要 |
PURPOSE:To obtain a resolution of <=0.5mum with advantage by using the line (i) exposure method and a specified sulfonic ester containing no isomer as a photosensitive agent. CONSTITUTION:This positive type photoresist composition mainly comprises an alkali-soluble resin and the photosensitive agent of 1,2-naphthoquinone-2- diazido-5-sulfonic acid (partial) ester of 1,1,3-tris-(4-hydroxy-3,5-dimethylphenyl)- butane represented by the formula in which D is H or a 1,2-naphthoquinone-2- diazido-5-sulfonyl group. The resist pattern high in resolution and deep in focal depth can be obtained by coating a substrate with this composition and prebaking it, and then, exposing and developing it, and using the CEL process in combination. |
