| 摘要 |
PURPOSE:To increase the degree of freedom in wavelength control, and to make it possible to conduct high-speed modulation by a method wherein a superlattice structure, which is formed by two kinds of materials selected in such a manner that the energy mismatching value of their conduction bands will be zeroed with each other even when their effective mass is different, is used as a light-emitting layer. CONSTITUTION:A superlattice structure 2, consisting of material having different effective mass, is epitaxially grown on a semiconductor substrate, and an n-type region is formed thereon. Impurities of n<+> type are added by diffusion (channel region 1) to a part of the above-mentioned n-type gate region, a part of the channel region 1 is removed by etching, and a p-type region 3 is formed thereon. Then, a gate electrode 6 and a source electrode 5 are formed. Lastly, after the substrate on the back side has been removed, a drain electrode 4 is formed. By utilizing the Bremsstrahlung sent from the electrons travelling in the semiconductor superlattice structure as above-mentioned, a semiconductor infrared- emitting device, which can be modulated at high speed, can be accomplished. |
