| 摘要 |
PURPOSE:To form a p type ohmic electrode required for manufacturing a blue colored light emitting element by a method wherein a Cu5AlSe4 layer is used as an intermediate layer for the ohmic forming method of a p type ZnSe. CONSTITUTION:An n-ZnSe is formed on a GaAs substrate and then a p type ZnSe 1, a p type Cu5AlSe4 layer 2 and an In electrode 3 are successively grown to be formed on a p type Se 1. At this time, the p type Cu5AlSe4 layer 2 can be formed by e.g. molecular beam epitaxial process while the In electrode 3 is to be formed by vacuum evaporating process. After the lamination of these layers, the whole body is to be heat-treated at 300 deg.C for two minutes. The favorable ohmic contact in 10<-5>OMEGA.cm<2> can be made when the contact resistance is measured by TLM process. Through these procedures, the ohmic electrode for p type ZnSe or p type ZnS or p type Zn(Se, S) can be formed. |
