| 摘要 |
<p>PURPOSE: To make it possible to form a very fine pattern and loosen a stepped area as a whole by etching anisotropically the entire surface formed with a photoresist pattern as a result and etching a patterned layer as the photoresist pattern and an etched byproduct as an etching mask. CONSTITUTION: A photoresist is coated on the surface of a layer to be patterned formed on a substrate 21. The photoresist is patterned, thereby forming a photoresist pattern 25. Then, an anisotropic etching process is executed on the entire surface as a result of the formation of the photoresist pattern, thereby forming an etching byproduct 26 on the side wall of the photoresist pattern. Then, the photoresist pattern 25 and the etching byproduct 26 are used as the etching mask, thereby etching the layer 22 to be patterned. This construction makes it possible to form a fine pattern below the exposure limit of a stepper.</p> |
