| 摘要 |
PURPOSE:To make it unnecessary to form a comparatively thick silicon oxide film on an active region by selective oxidation, by eliminating a polycrystalline silicon film on a silicon oxide film so as to keep a desired distance, and forming an N-type region turning to a photoelectric conversion part, a P<+> type region turning to an element isolation part, and an N-type region turning to a charge transfer part. CONSTITUTION:A polycrystalline silicon film 4 is formed on a silicon oxide film 3, and selectively eliminated by a photoresist 6a pattern edge, so as to keep a desired distance. An N-type region 7 turning to a photoelectric conversion part is formed by using the photoresist 6a as a mask. After the photoresist 6a is eliminated, a P<+> type region 10 turning to an element isolation part is formed in the self-alignment manner to the one end of the polycrystalline silicon film 4. The N-type region 8 turning to a charge transfer part is formed in the self-alignment manner to the P<+> type region 10 turning to an element isolation part by using impurity concentration difference. Thereby the generation of crystal defect due to a dislocation loop caused by selective oxidation and the profile fluctuation of an active region can be reduced.
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