Monolithische Schutzdiodenmontage und Schutzsysteme.

摘要

Monolithic assembly of protection diodes, formed in a semiconductor substrate of a type with given conductivity, in which the first face of the substrate (10) comprises discrete zones of the opposite conductivity type, of which one (13) is connected to a reference potential, and the others (12-1...12-n) are connected to terminals (18-1...18-n) intended to be connected to circuits to be protected and, in which the second face of the substrate is uniformly overdoped with the said conductivity type and coated with a floating metallisation (21).