| 摘要 |
PURPOSE:To produce a semiconductor sintered film having band gaps suitable for highly efficient solar batteries without using an injurious cadmium. CONSTITUTION:Tin (II) sulfide powder having an average particle diameter of 0.1-40mum is mixed with a tin halide such as tin (II) chloride and subsequently sintered at 300-800 deg.C. The tin halide is preferably added in an amount of 0.01-50wt.% to the tin (II) sulfide powder. Thus, the semiconductor sintered film in which the tin halide acted as a fusing agent to prevent the defects of the crystals is obtained. |
