High density memory device

摘要

A high density memory system is formed by reducing the number of electrical conductors that are needed to connect individual memory devices into an operable memory system. The reduction is accomplished by serially reading and writing data from and into selected memory elements on one function conductor while eliminating the need for additional control conductors by causing the state of the signal on a clock conductor as compared to the state of the signal on the function conductor at selected times to control the operating mode of the memory system.