发明名称 METHOD FOR MELTING FERROSILICON AND CRUCIBLE FOR MELTING
摘要 <p>PURPOSE:To melt forrosilicon which has a high component ratio of silicon and does not make self-induction heating as it is by induction heating without using a graphite crucible. CONSTITUTION:Granular materials of the ferrosilicon of the component ratio at which the ferrosilicon does not make the self-induction heating (for example, 75% ferrosilicon) and granular materials of iron are first fed into the crucible consisting of an insulating material wound with an induction coil and are inductively heated. Metallic silicon or the ferrosilicon having the high silicon component ratio is fed into the crucible to execute the component adjustment over the entire part after heating and melting of the entire part. The entire part is melted by heating and the total melt is tapped. Even if the ferrosilicon does not make the self-induction heating, the iron incorporated therein makes the self-induction heating. The ferrosilicon is thus heated and melted by heat conduction. The silicon component ratio over the entire part is lowered by feed of the iron but the component adjustment of the entire is executed by feeding the metallic silicon or the ferrosilicon having the high silicon component ratio to the meld after heating and melting of the entire part, by which the total melt having the high silicon component ratio is tapped.</p>
申请公布号 JPH06322471(A) 申请公布日期 1994.11.22
申请号 JP19930109688 申请日期 1993.05.12
申请人 FUJI ELECTRIC CO LTD 发明人 HAYASHI SHIZUO
分类号 C22B9/16;C22C33/04;F27B14/06;F27B14/10;(IPC1-7):C22C33/04 主分类号 C22B9/16
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