Method for producing a gate electrode with a Polycide (Polycid) structure

摘要

A method is described for producing a gate electrode. A first thermal oxide film is formed on a silicon substrate. Part of the first thermal oxide film and of the substrate are removed by a photolithography process. An impurity is implanted in the substrate after a second thermal oxide film has been formed over the entire area of the structure obtained. The first thermal oxide film and the second thermal oxide film are removed and a gate oxide film is subsequently formed over the entire surface area of the structure obtained. A doped polysilicon film and a silicide film are formed on the gate oxide film and a desired gate electrode is subsequently formed according to the photolithography process. A third thermal oxide film is formed on the surface of the structure obtained and a second impurity region is subsequently formed on the substrate.