发明名称
摘要 Disclosed is an integrated semiconductor circuit device which has a plurality of cell arrays formed in parallel on a surface region of the substrate, and a three-layer wire formed on the substrate and between each cell array. The direction of a wire track of a second layer wire is originally determined in a direction parallel to the cell arrays, and the direction of wire tracks of first and third layer wires is originally determined in a direction orthogonal to the originally determined direction of the wire track of the second layer wire. The first layer wire and the third layer wire are formed on the same wire track. Part of the third layer wire is formed on a wire track orthogonal to the originally determined direction of the wire track of the third layer, and the third layer wire and the second layer wire are connected to each other on the wire track which is orthogonal to the originally determined direction of the wire track of the third layer wire.
申请公布号 JPH0693480(B2) 申请公布日期 1994.11.16
申请号 JP19850063450 申请日期 1985.03.29
申请人 发明人
分类号 H01L21/3205;H01L21/82;H01L23/52;H01L23/528;H01L27/118;(IPC1-7):H01L21/82;H01L21/320 主分类号 H01L21/3205
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