Pattern exposing method using phase shift and mask used therefor

摘要

A pattern exposing method forms a predetermined resist pattern on a substrate by exposing a first resist layer which is formed on the substrate using a first reticle which includes a first pattern for exposing a first corresponding pattern on the first resist layer by use of a phase shift of light transmitted through the first reticle, developing the exposed first resist layer, exposing a second resist layer which is formed on the entire surface of the substrate, including a top of the first resist layer, using a second reticle which has a second pattern for exposing a second corresponding pattern on the second resist layer by use of light transmitted through the second reticle, where the second corresponding pattern overlaps at least a part of the first corresponding pattern, and developing the second resist layer so that a part of the first corresponding pattern is removed by the second corresponding pattern and the predetermined resist pattern is formed.