| 摘要 |
PURPOSE:To suppress the recoupling of light-excited carriers near the interfaces between a ZnO and pin layers and between the ZnO layer and a substrate by minimizing the silicon content of a zinc oxide thin film layer having a specific rugged surface and c-axis orientation at the boundary with the substrate. CONSTITUTION:This element has a zinc oxide thin film layer 102 and pin layer (p-, i-, and n-layers) 103 composed of a non-single crystal silicon semiconductor material which are successively formed on a substrate 101. The layer 102 is composed of a crystalline layer having c-axis orientation, has surface ruggedness of 0.1-1.0mum, and contains silicon. The silicon content of the layer 102 varies in the thickness direction, with the content being the minimum at the interface with the substrate 101 and gradually increasing towards the layer 103. Therefore, not only the open-circuit voltage, short-circuit current, and photoelectric conversion efficiency of the element can be improved, but also the optical deterioration and vibration deterioration of the element can be suppressed. |
