X-ray image intensifier having an image sensor with amorphous semiconductor material layer

摘要

The invention is directed to an x-ray image intensifier having an evacuated housing, an input luminescent screen, electron optics, and an image sensor applied inside the housing at that side thereof lying opposite the input luminescent screen. The side of the image sensor facing toward the input luminescent screen is provided with a layer system that includes at least one semiconductor layer that effects an electron conversion of the incident electrons by ionization with charge carrier multiplication and is composed of amorphous semiconductor material.