Method and device for producing semiconductor layers
摘要
In order to improve a method for producing semiconductor layers, in which the semiconductor layer is ablated from a target using a pulsed laser beam and deposited as a layer on a substrate, such that the best possible layers can be obtained using this method, it is proposed to produce the target as a particle composite of particles of the semiconductor material and for the particles to be selected with a particle size such that essentially per laser pulse at least a considerable portion of a particle is evaporated or ablated.
申请公布号
DE4329268(A1)
申请公布日期
1994.11.10
申请号
DE19934329268
申请日期
1993.08.31
申请人
DEUTSCHE FORSCHUNGSANSTALT FUER LUFT- UND RAUMFAHRT EV, 53127 BONN, DE