发明名称 Method and device for producing semiconductor layers
摘要 In order to improve a method for producing semiconductor layers, in which the semiconductor layer is ablated from a target using a pulsed laser beam and deposited as a layer on a substrate, such that the best possible layers can be obtained using this method, it is proposed to produce the target as a particle composite of particles of the semiconductor material and for the particles to be selected with a particle size such that essentially per laser pulse at least a considerable portion of a particle is evaporated or ablated.
申请公布号 DE4329268(A1) 申请公布日期 1994.11.10
申请号 DE19934329268 申请日期 1993.08.31
申请人 DEUTSCHE FORSCHUNGSANSTALT FUER LUFT- UND RAUMFAHRT EV, 53127 BONN, DE 发明人 KLOSE, MANFRED, 70569 STUTTGART, DE;BRIEGER, MICHAEL, DR., 70437 STUTTGART, DE;ALLENSPACHER, PAUL, DIPL.-ING.-CHEM., 73265 DETTINGEN, DE
分类号 C23C14/28;(IPC1-7):H01L21/203;B23K26/00 主分类号 C23C14/28
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