Magnetoresistive sensor with vertical sensitivity and use of the sensor

摘要

According to the invention, at least one gaseous recess (4) is made in a (100) surface (20) of an Si substrate (2) and an MR sensor element (6) is arranged on an oblique lateral wall (40) of the recess (4), which lateral wall (40) is formed by a (111) crystal surface of the Si. By virtue of the crystallographically determined inclination of the MR sensor element (6) by an angle (BETA) of 54.74 DEG with respect to the surface (20), the MR sensor is also sensitive to magnetic fields (H) which are oriented perpendicularly to the surface (20) of the Si substrate (2). Furthermore, because of the larger available width of the MR sensor element (6), the sensitivity can be increased compared to a known planar MR sensor and the spatial requirement for the sensor can be reduced at the same time. Barber-pole or giant MR systems may be provided as the MR sensor element (6). <IMAGE>