发明名称 Mask having a phase shifter and method of manufacturing same
摘要 There is disclosed a mask which includes a first phase shifter layer and a second phase shifter layer formed on the first phase shifter layer and has a structure capable of easily effecting highly precise control of the phase of exposure light and correction for a defect in the phase shifter layers. There are also disclosed a method of manufacturing the mask and a method of forming by use of the mask a pattern which has a smaller local error in pattern dimension and is free of a defect.
申请公布号 US5362591(A) 申请公布日期 1994.11.08
申请号 US19900593808 申请日期 1990.10.05
申请人 HITACHI LTD. ET AL. 发明人 IMAI, AKIRA;HASEGAWA, NORIO;FUKUDA, HIROSHI;TANAKA, TOSHIHIKO
分类号 G03F1/00;(IPC1-7):G03F9/00 主分类号 G03F1/00
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