| 摘要 |
<p>PURPOSE:To provide a nonvolatile semiconductor memory and the reading method capable of decreasing a current required for pre charging a column line than in the conventional practice and stably reading out the memory. CONSTITUTION:Column line potential control transistors 41-44 controlling the potential of the column line by means of the gate potential are inserted between transistors 31-34 for charging the respective column lines and the column lines BL1-BL4. By suppressing the potential for charging the column line to be a low value by means of the column line potential control transistors 41-44, an instantaneous current due to the precharge of the column line is suppressed to be a small value. In a reading cycle after the completion of precharging, the gate potential of the column line potential control transistor is made smaller than that at the precharging time and the occurrence of malfunction is prevented so that the potential at the potential detecting point of the column line is made not to fluctuate even when the lowering of the potential of the column line arises due to the capacitive coupling of column lines to each other.</p> |
