发明名称 ELECTRICALLY REWRITABLE NONVOLATILE MEMORY
摘要 <p>PURPOSE:To prevent the occurrence of erroneous erasure, erroneous writing, and erroneous reading by making a driver to select and drive all word lines at a fixed voltage during the period of a reset signal outputted from a reset circuit when the power supply is turned on and a discharge circuit to discharge electricity from a control gate and bit lines. CONSTITUTION:When the power supply is turned on, a reset circuit 2 outputs a reset signal 201 for a fixed period of time (several mus) and a bias circuit 3 outputs a fixed voltage (2V) 301 upon receiving the signal 201. When the signal 201 is inputted, a driver 4 selects and drives all word lines by outputting a voltage which is equal to the voltage 301 to word lines 101 and 102. As a result, four memory cells 1 are turned on and a discharge circuit 5 starts discharging operations to discharge electricity from control lines 111 and 112 and bit lines 121 and 122. When the circuit 5 starts the discharging operations, the cells 1 are short-circuited with each other, but, since all word lines are not selected and driven with a power supply voltage at a logically high level, but with the voltage of 2V which is lower than the lowest programmable voltage, the occurrence of erroneous erasure, erroneous writing, and erroneous reading is prevented.</p>
申请公布号 JPH06309889(A) 申请公布日期 1994.11.04
申请号 JP19930102944 申请日期 1993.04.28
申请人 SEIKO INSTR INC 发明人 HAMAMOTO KATSUYA
分类号 G11C17/00;G11C16/02;G11C16/06;G11C16/20;G11C16/24;H01L21/8247;H01L27/115;(IPC1-7):G11C16/06 主分类号 G11C17/00
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