| 摘要 |
PURPOSE:To enhance the energy conversion efficiency significantly by providing a layer for converting a light in the wavelength region uncontributive to photoelectric conversion into a light contributive to photoelectric conversion on the light receiving face side. CONSTITUTION:The surface of a p-type semiconductor Si substrate 3 is subjected to anode formation and an n<+> semiconductor layer 2 is formed on the surface whereas a p<+> semiconductor layer 4 is formed on the rear. A light receiving face current collecting electrode 1 is provided on the n<+> semiconductor layer 2 and a rear current collecting electrode 5 is provided under the p<+> semiconductor layer 4. Since a layer obtained through anode formation absorbs ultraviolet rays to emit a visible light, the short wavelength components (ultraviolet rays) which had been uncontributive to photoelectric conversion and converted into heat can contribute to photoelectric conversion thus enhancing the energy conversion efficiency of solar cell. Furthermore, the layer obtained through anode formation has porous surface exhibiting antireflection thus enhancing the energy conversion efficiency furthermore. |
