发明名称 Method for growing a diamond or c-BN thin film on a diamond or c-BN substrate.
摘要 A heating process for producing a high quality diamond or c-BN film on a diamond or c-BN substrate comprising placing a diamond or c-BN substrate in vacuum, elevating the temperature and treating its surface with a chlorine containing gas or a fluorine containing gas. The treatment gas is then removed and feed gases are introduced which are suitable for growing a thin diamond or c-BN film on the surface substrate under chemical vapor deposition conditions. <IMAGE>
申请公布号 EP0622472(A1) 申请公布日期 1994.11.02
申请号 EP19940109892 申请日期 1991.03.06
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD 发明人 KIMOTO, TSUNENOBU, C/O ITAMI WORKS OF SUMITOMO;TOMIKAWA, TADASHI, C/O ITAMI WORKS OF SUMITOMO;FUJITA, NOBUHIKO, C/O ITAMI WORKS OF SUMITOMO
分类号 C30B25/02;C23C16/02;C23C16/27;C23C16/34;C30B29/04;H01L21/205;H01L21/324;H01L29/861;H01L33/30;H01L33/34 主分类号 C30B25/02
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