发明名称 |
Semiconductor memory apparatus |
摘要 |
A semiconductor memory device is for randomly reading and writing data. Only a second bit line pair selected by a string selecting signal is amplified by a main amplifier. The number of the upper bit line pairs to be charged and discharged from the Vcc level or Vss level is reduced to thereby reduce the consumption current of the device.
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申请公布号 |
US5361233(A) |
申请公布日期 |
1994.11.01 |
申请号 |
US19930104936 |
申请日期 |
1993.08.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOTANI, HISAKAZU |
分类号 |
G11C11/401;G11C7/06;G11C7/10;G11C7/18;G11C11/409;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C7/02 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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