| 摘要 |
A method and system for fabricating semiconductor wafers is disclosed wherein an atomically clean, semiconductor substrate having a surface is provided in a rapid thermal processing chamber. One embodiment involves cleaning the substrate by exposing it to a first gas at a temperature substantially within the range of 850 DEG C. to 1250 DEG C. for approximately 10 to 60 seconds. Subsequently, a coating having a first thickness is formed superjacent the substrate surface by introducing a second gas at a temperature substantially within the range of 850 DEG C. to 1250 DEG C. for approximately 5 to 30 seconds in the chamber. The resultant coating, depending on the gas selected, comprises either SiO2 or Si-F. Subsequently, the substrate having the coating is exposed to a third gas at a temperature substantially within the range of 900 DEG C. to 1050 DEG C. for approximately 30 minutes to one hour, thereby forming a silicon dioxide layer. The silicon dioxide layer is disposed superjacent the substrate and subjacent the coating. In one embodiment of the invention, this step is performed in a furnace. In an alternate embodiment of the present invention, a transferring device, such as a robot, is employed, using a load lock, to transfer the substrate between the RTP chamber and the furnace without exposing the substrate to atmospheric pressure.
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