| 摘要 |
PURPOSE:To obtain an oxide crystal film having stable composition and high quality with good reproducibility by forming oxide film on a substrate, coating the surface of the oxide film with diamond carbon film and subjecting the coated film to heat treatment. CONSTITUTION:Oxide film (e.g. ferroelectric oxide film containing lead) is formed, preferably with a film thickness of 100-300nm, on a substrate. The surface of the oxide film is coated with diamond carbon film, preferably of 10-50nm in film thickness. Subsequently, the coated film is subjected to heat treatment at 600-700 deg.C for l-10 minute, preferably in an oxygen atmosphere to obtain an oxide crystal film. Even in the case the oxide film contains an element of high vapor pressure, the diamond carbon film prevents the evaporation of a constituting element having high vapor pressure during the heat treatment and this method prevents compositional change of the oxide film to enable the keeping of its stoichiometric composition. |
