Method to radiation harden the buried oxide in silicon-on-insulator structures

摘要

A method of forming a radiation hardened SOI structure is disclosed. The buried oxide layer of an SOI structure is hardened prior to the bonding of a device wafer which forms the silicon portion of the silicon-on-insulator. The radiation hardening is done by implantation of recombination center-generating impurities. All the radiation hardening is done prior to the bonding of the device silicon layer and allows for radiation hardening of the buried oxide layer of an SOI structure without any damage to the silicon device layer.