| 摘要 |
PURPOSE:To enhance the reliability of semiconductor device by setting the average crystal grain size of gold composing a gold wiring for connecting elements formed on a semiconductor substrate at specific times as large as the width of gold wiring. CONSTITUTION:An insulation film 2 is formed on a semiconductor substrate 1 followed by sequential formation of a titanium (Ti) film 3 and a platinum (Pt) 4 by sputtering. A photoresist 5 is then patterned and used as a mask in electrolytic plating thus depositing a gold film 6 having the width equal to the interval of photoresist pattern. Subsequently, the photoresist 5 is removed followed by removal by etching of the Pt film 4 and the Ti film 3 except the underlying part of the gold plating film 6 and then it is covered with silicon oxide 7 thus obtaining a gold wiring structure. In this regard, the ratio of the average size of crystal grain 8 to the wiring width(w) is set in the range of 0.17-0.25 thus obtaining a predetermined MTTF. This structure ensures a predetermined MTTF. |
