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发明名称
Verfahren zum Bilden einer Struktur einer Halbleitereinrichtung vom Mehrschichttyp
摘要
申请公布号
DE4414369(A1)
申请公布日期
1994.10.27
申请号
DE19944414369
申请日期
1994.04.25
申请人
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP
发明人
ISHIBASHI, TAKEO, ITAMI, HYOGO, JP
分类号
G03F7/20;G03F9/00;H01L21/027;(IPC1-7):H01L21/308;G03F7/22
主分类号
G03F7/20
代理机构
代理人
主权项
地址
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