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发明名称
Verfahren zur Herstellung einer BiCMOS-Halbleiterschaltungsanordnung
摘要
申请公布号
DE3831264(C2)
申请公布日期
1994.10.20
申请号
DE19883831264
申请日期
1988.09.14
申请人
SAMSUNG ELECTRONICS CO., LTD., SUWON, KR
发明人
MIN, SUNG-KI, INCHUN, KR;KAHNG, CHANG-WON, SEOUL/SOUL, KR;CHO, UK-RAE, KYOUNGSANGBUK, KR;YOUN, JONG-MIL, DAEGU, KR;CHOT, SUK-GI, SEOUL/SOUL, KR
分类号
H01L29/73;H01L21/302;H01L21/331;H01L21/8249;H01L27/06;H01L27/10;H01L29/732;(IPC1-7):H01L27/06;H01L21/72
主分类号
H01L29/73
代理机构
代理人
主权项
地址
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