Semiconductor optical integrated circuits and method for fabricating the same.

摘要

The invention provides a semiconductor optical monolithic integration device comprises a semiconductor substrate including an active region and a passive region. Epitaxial layers including a multiple quantum well structure have a variation in band gap energy and thickness along a waveguide direction. said epitaxial layers in said active region are selectively grown by a metal organic vapor phase epitaxy on a first selective growth area defined by a first mask pattern provided in said active region except in said passive region. Said first mask pattern having a variation in width along said waveguide direction. Said epitaxial layers are simultaneously and non-selectively grown on an entire of said passive region by said metal organic vapor phase epitaxy and said epitaxial layers having a mesa structure in said active region and a plane structure in said passive region. A cladding layer having a ridged structure selectively is grown by a metal organic vapor phase epitaxy on a second selective growth area defined by a second mask pattern provided in said active and passive regions. Said second mask pattern having a constant width. In said active region said ridged cladding layer completely embedding said mesa structure epitaxial layers and in said passive region said ridged cladding layer being provided on said plane structure epitaxial layers.