| 摘要 |
PURPOSE:To provide an SRAM memory cell structure which enables reduction of a cell area and prevents increase of diffusion resistance and capacity, and a formation method thereof. CONSTITUTION:In an SRAM memory cell structure wherein a word transistor and a driver transistor are arranged on a substrate and a load element is laminated on an upper layer part thereof, a word line is arranged in an approximately a center of a cell, two driver transistors 8, 9 are arranged at both sides thereof and a wiring for a bit contact 12 of a multilayer structure is arranged inside a contact hole which supplies a signal to the driver transistor. |
