| 摘要 |
<p>PURPOSE:To reduce the influence of multiple reflection on the position of a mask for X-ray exposure, namely, to improve the alignment accuracy of the mask and, at the same time, to form a highly accurate fine pattern. CONSTITUTION:An X-ray absorbing layer 3 is formed on an X-ray transmitting substrate 1 and a position detecting mark 21 used for aligning a semiconductor wafer stuck with an X-ray sensitive film is formed by forming a step on the substrate 1. It is also possible to provide a non-transmitting layer which intercepts position detecting light in an area of the mask for X-ray exposure containing the position detecting mark or to provide a reflection preventing film which transmits the position detecting light on both or one surface of the substrate 1 in an area containing a transmitting window. It is also possible, moreover, the non-transmitting and reflection preventing layers can be constituted in one layers or pluralities of layers.</p> |
