ALUMINUM WIRING BOARD, MANUFACTURE THEREOF AND MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form a contact hole in an insulation film without attacking an aluminum wiring even if a solution of hydrofluoric acid corroding aluminum is used, thereby to increase reliablity, by forming a molybdenum film on the aluminum wiring and at least in the portion in which the contact hole is to be formed. CONSTITUTION:On a glass substrate 21, a base coat film 22, a semiconductor layer 23, an insulation film 24, a gate electrode 25 and Mo masks 26 and 27 are sequentially formed. When forming the Mo masks 26 and 27, the Mo masks 26 and 7 are formed to coat the portion of the gate electrode 25 terminal connected to a drain electrode 23a, in which portion a contact hole is to be formed. Then, after an ion implantation, the Mo mask 27 formed on the gate electrode 25 terminal is left when removing the Mo mask 26. Further, an inter-layer insulation film 28 is formed on the whole surface of the glass substrate 21. Then, on the source/drain region 23a and the Mo mask 27, contact holes 29, 30 and 31 are formed.