| 摘要 |
<p>PURPOSE:To improve productivity by using a c-Si substrate provided with recesses in the parts corresponding to pixel electrodes and connecting the sources of FETs to the pixel electrodes by the metallic films in the flank parts of the c-Si corresponding to the pixel electrode parts. CONSTITUTION:The c-Si (single crystal or polycrystalline silicon) substrate having (100) faces on its surfaces is subjected to anisotropic etching, by which tapered apertures are obtd. therein. Metal connecting the sources 4 of the FETs and the pixel electrodes 6 are deposited by evaporation on the flanks of the apertures. The drains 3 of the FETs and drain lines of a flush type are aligned in order to obtain a high opening rate. Auxiliary capacitance electrodes 11 are formed on the rear surface of the parts where the FETs are formed. Further, the drains 3 and sources 4 of the n<+> type layer of the FETs consisting of the c-Si are formed in a self-alignment manner. The recesses having about 54 deg. angle are obtd. on the substrate flanks by subjecting the c-Si substrate after the formation of the sources to anisotropic etching. This c-Si substrate 7 is adhered to a glass substrate 1 by an adhesive 8 to reduce the thickness. The pixel electrodes 6 are formed on the rear surface.</p> |
