MANUFACTURING METHOD OF CHARGE COUPLED DEVICE

摘要

The method for fabricating a charge coupled device includes the steps of: sequentially forming an n-type diffusion layer, first silicon oxide layer; and first polysilicon layer on a substrate; patterning the first polysilicon layer into a transmission electrode; forming a second silicon oxide layer on the overall surface of the substrate excluding an exposed portion of the first silicon oxide layer; carrying out ion implantation using the first polysilicon layer as a mask to form p-type ion implanting layer; forming a first planarization layer on the overall surface of the substrate and etching the first planarization layer to expose the surface of the first polysilicon layer; sequentially etching the first polysilicon layer and first planarizaion layer; forming a conductive layer and second planarization layer on the overall surface of the substrate; etching the second planarization layer to expose the conductive layer, selectively etching the conductive layer; sequentially removing the second planarizaion layer and conductive layer; and forming a protective layer on the overall surface of the substrate.