DEVICE AND PROCESS FOR PRODUCING SiC SINGLE CRYSTALS

摘要

In a process and a device for producing SiC single crystals (20), a reaction chamber (2), in which there is a seed crystal (21) for the separation of a SiC single crystal (20) from the gas phase, is connected to a storage chamber (4) which is at least partly filled with a supply of SiC (40) by a gas channel (3) with a predetermined cross-section for conveying the SiC in the gas phase. The supply of SiC (40) is sublimated in a heating device (6) and a temperature gradient is created in the reaction chamber (2). It is thus possible to produce SiC single crystals of high crystalline quality and single-crystal yield, and having any cross-sectional area because the conveyance rate of the gas molecules can be precisely adjusted.