发明名称 |
Method for forming a DRAM memory cell with tapered capacitor electrodes |
摘要 |
A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. Accordingly, the cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure, A unique process for forming the capacitance electrode with a tapered end surface is also provided.
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申请公布号 |
US5354716(A) |
申请公布日期 |
1994.10.11 |
申请号 |
US19910727678 |
申请日期 |
1991.07.10 |
申请人 |
NEC ELECTRONICS, INC. |
发明人 |
PORS, GARY A.;TANG, GERNIA |
分类号 |
H01L27/108;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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