Nonvolatile semiconductor memory device having parallel write and read function

摘要

In a nonvolatile semiconductor memory device formed by nonvolatile memory cells connected to word lines and bit lines, one of the word lines is selected and driven by row address decoders, and one of the bit lines is selected and driven by column address decoders. An address degenerating circuit formed by NAND circuits, OR circuits or the like is interposed at a prestage of the row address decoders or the column address decoders, thus enabling a parallel write and read function.