| 摘要 |
PURPOSE: To improve reliability of wiring of a semiconductor element by reducing contact resistance, by preventing contact plug metal from being directly exposed to atmospheric air during manufacturing process and from directly coming into contact with a residual photosensitive film, by forming a double metal thin films on the contact plug metal. CONSTITUTION: In order to form metal wiring on a semiconductor substrate 1, a deep first contact hole 10 is formed, in which tungsten 5 as contact plug metal is buried. A TiSi2 thin film 6 and a TiN thin film 7 are vapor-deposited on the whole upper structure. In order to form a second contact hole in a polysilicon film 3, a photosensitive film is spread on the TiN thin film 7. By using it, the TiN thin film 7, a TiSi2 thin film 6 and an insulating film 4 are etched in order, and a second contact hole 11 is formed as far as the upper surface of the polysilicon 3. After the photosensitive film 8 is eliminated, the TiN thin film 7 is etched, Al alloy 9 is vapor-deposited, and metal wiring is formed.
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