发明名称 METHOD FOR MOVEMENT OF WAFER IN ION IMPLANTATION MACHINE AND ITS TREATMENT APPARATUS
摘要 PURPOSE: To restrain minimally occurrence of a particle pollution depending on repeated pressurization in an ion implantation chamber by providing a vent valve which inputs and outputs fluid to and from a load lock chamber, a controller, and a dividing means of fluid flow, and prescribed surface. CONSTITUTION: A wafer is transferred by a wafer handler and a wafer support 155 into a load lock chamber, and it is sealed by a bell-shaped water surrounding member 140. Fluid is supplied and discharged for deaeration via first and second passages 236, 232. At this time, a controller controls a vent valve 224 and the like. The fluid is changed in its flowing direction and speed by a diffuser plate 210 fitted on the support 155 and a prescribed chamber surface in order to prevent polluted grains from adhering to the water. After decompression of the lock chamber, the wafer is transferred to an implantation chamber. After the implanted wafer is taken out from the lock chamber, the chamber is cleaned with pressurized nitrogen.
申请公布号 JPH06283130(A) 申请公布日期 1994.10.07
申请号 JP19930346555 申请日期 1993.12.22
申请人 EATON CORP 发明人 SUTEIIBUN RANDORU BURUBEIKAA
分类号 C23C14/00;C23C14/48;H01J37/18;H01J37/317;H01L21/00;H01L21/265;H01L21/677;(IPC1-7):H01J37/317 主分类号 C23C14/00
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