| 摘要 |
PURPOSE:To achieve the high photoelectric conversion efficiency and the long life of the title device by a method wherein a first P-N-type photovoltaic element composed of crystalline silicon and a second photovoltaic element whose band gap is wider than that of the crystalline silicon and which uses a I-III-VI compound as an absorption layer are stacked. CONSTITUTION:A transparent electrode 7 is formed on a glass substrate 6 by a sputtering method which uses a ZnO sintered body containing 2wt.% of Al2O3 as a target. An N-type CdS layer 8 is formed on it, a P-type CuInS2 layer 9 is formed by a three-source simultaneous vapor deposition method which uses Cu, In and S as evaporation sources, a transparent electrode 10 is formed additionally under the same condition, and an upper-part cell is formed. As a lower-part cell, a polycrystalline silicon cell which has been extracted from a solar cell module available on the market is used. The upper-part cell and the lower-part cell are connected while a transparent epoxy resin 12 is sandwiched between the face of the transparent electrode on the side opposite to the glass substrate for the CuInS2 layer and the face of a comb-shaped electrode for a polycrystalline layer, and a tandem cell can be formed. |
