Transistor JFET vertical à mode de fonctionnement bipolaire optimisé et procédé de fabrication correspondant.,申请号FR19920008179-传众专利搜索

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发明名称	Transistor JFET vertical à mode de fonctionnement bipolaire optimisé et procédé de fabrication correspondant.
摘要
申请公布号	FR2693314(B1)	申请公布日期	1994.10.07
申请号	FR19920008179	申请日期	1992.07.02
申请人	CHANTRE ALAIN	发明人	CHANTRE ALAIN
分类号	H01L21/331;H01L21/337;H01L29/737;H01L29/808;(IPC1-7):H01L29/808	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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