发明名称 Method of polishing semiconductor wafer.
摘要 A semiconductor wafer (12) is ground or polished to a desired thickness by pressing the wafer against a rotating turntable (13), characterised in that the semiconductor wafer is bonded to a plate (11), and a thickness-regulating member (15) whose surface is more resistant to polishing/grinding than the semiconductor wafer is arranged on the plate. By way of example, the thickness-regulating member comprises a silicon matrix and has a silicon oxide film at the surface.
申请公布号 EP0403287(B1) 申请公布日期 1994.10.05
申请号 EP19900306519 申请日期 1990.06.14
申请人 SHIN-ETSU HANDOTAI COMPANY LIMITED 发明人 NAKAZATO, YASUAKI;OGAWARA, HIROO
分类号 B24B37/07;H01L21/304 主分类号 B24B37/07
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