发明名称 |
Method of polishing semiconductor wafer. |
摘要 |
A semiconductor wafer (12) is ground or polished to a desired thickness by pressing the wafer against a rotating turntable (13), characterised in that the semiconductor wafer is bonded to a plate (11), and a thickness-regulating member (15) whose surface is more resistant to polishing/grinding than the semiconductor wafer is arranged on the plate. By way of example, the thickness-regulating member comprises a silicon matrix and has a silicon oxide film at the surface. |
申请公布号 |
EP0403287(B1) |
申请公布日期 |
1994.10.05 |
申请号 |
EP19900306519 |
申请日期 |
1990.06.14 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
NAKAZATO, YASUAKI;OGAWARA, HIROO |
分类号 |
B24B37/07;H01L21/304 |
主分类号 |
B24B37/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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