发明名称 |
Total reflection X-ray diffraction micrographic method and apparatus |
摘要 |
A method for detecting and evaluating crystal defects existing in the extreme neighborhood of the surface of a crystal specimen through the use of X-ray analyzing micrography. Synchrotron radiation is used as the X-ray source. A monochromatic X-ray beam generated from the synchrotron radiation is directed into the crystal specimen at a glancing angle smaller than the critical angle of said crystal specimen relative to said monochromatic X-ray beam. The diffracted X-rays from the crystal specimen due to asymmetrical reflection are detected in order to observe the resulting diffracted image.
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申请公布号 |
US5353324(A) |
申请公布日期 |
1994.10.04 |
申请号 |
US19920865269 |
申请日期 |
1992.04.08 |
申请人 |
NEC CORPORATION |
发明人 |
KITANO, TOMOHISA |
分类号 |
G01B15/02;G01N23/207;(IPC1-7):G01N23/207 |
主分类号 |
G01B15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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