发明名称 Total reflection X-ray diffraction micrographic method and apparatus
摘要 A method for detecting and evaluating crystal defects existing in the extreme neighborhood of the surface of a crystal specimen through the use of X-ray analyzing micrography. Synchrotron radiation is used as the X-ray source. A monochromatic X-ray beam generated from the synchrotron radiation is directed into the crystal specimen at a glancing angle smaller than the critical angle of said crystal specimen relative to said monochromatic X-ray beam. The diffracted X-rays from the crystal specimen due to asymmetrical reflection are detected in order to observe the resulting diffracted image.
申请公布号 US5353324(A) 申请公布日期 1994.10.04
申请号 US19920865269 申请日期 1992.04.08
申请人 NEC CORPORATION 发明人 KITANO, TOMOHISA
分类号 G01B15/02;G01N23/207;(IPC1-7):G01N23/207 主分类号 G01B15/02
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