发明名称 |
Etching method and etching apparatus therefor |
摘要 |
Disclosed is an etching method and an apparatus for performing an etching by alternately and repeatedly switching an average thickness of an ion sheath and an average energy of etching ions between two different values. Since the etchant absorption to the surface of an article to be etched and the etching by ions are effectively performed, it is possible to reduce the influence of an aspect ratio on an etching depth, and hence to perform the etching with an equal depth even if the width of the opening is changed.
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申请公布号 |
US5352324(A) |
申请公布日期 |
1994.10.04 |
申请号 |
US19930136947 |
申请日期 |
1993.10.18 |
申请人 |
HITACHI, LTD. |
发明人 |
GOTOH, YASUSHI;KURE, TOKUO;KAWAKAMI, HIROSHI;KATSUYAMA, MASANORI;YAGI, KIYOMI;ENAMI, HIROMICHI |
分类号 |
H01L21/3065;H01L21/311;H01L21/3213;H01L21/8242;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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