发明名称 MANUFACTURE OF THIN FILM RESISTOR
摘要 <p>PURPOSE:To obtain a title resistor having a desired resistance value by a simple working method by estimating a variation rate in resistance value of this resistor with a heat treatment temperature and by deciding an electrode shape on the basis of the estimated rate. CONSTITUTION:A preliminary heat treatment is made (step 103). A probe 5 is brought into contact with a resistance value measuring pattern formed by step 102 to measure a resistance value of a CRSiO2 resistor film 2 by a measuring instrument 6 (step 104). A stabilization heat treatment temperature which turns into a predetermined resistance at the time of completion is decided from this measured value and this variation rate in resistance. Al patterns for resistance electrode use are formed in respective thin film resistor elements (step 105). A heat treatment is made from results of step 104 as a stabilization heat treatment (step 106). This can provide a thin film resistor of a target resistance value. Therefore, a tin film resistor having a desired resistance value can be obtained by a simple working method without the need of a residual gas measuring apparatus or a laser generator.</p>
申请公布号 JPH06275413(A) 申请公布日期 1994.09.30
申请号 JP19930059034 申请日期 1993.03.18
申请人 HITACHI LTD 发明人 KAWAI AKINARI;KAWAHITO MICHIYOSHI;TATEISHI HIDEKI
分类号 H01C7/00;H01C17/12;(IPC1-7):H01C17/12 主分类号 H01C7/00
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