发明名称 |
Method of fabricating bipolar transistors with buried collector region |
摘要 |
A method of fabricating a bipolar transistor with a buried subcollector by forming a collector layer and a base layer in a semiconductor substrate. A polysilicon layer is deposited over the base layer and spaced emitter and base contact regions formed in the base layer. A mask is formed over the emitter and base contact regions and the substrate anisotropically etched to form pedestals with vertical sidewalls. A masking layer is formed on the vertical sidewalls, and a large angle ion implant used to introduce ions beneath the collector layer, thereby forming a subcollector region.
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申请公布号 |
US5350700(A) |
申请公布日期 |
1994.09.27 |
申请号 |
US19930160243 |
申请日期 |
1993.12.02 |
申请人 |
UNITED MICRO ELECTRONICS CORPORATION |
发明人 |
YANG, MING-TZONG;WU, CHUNG-CHENG |
分类号 |
H01L21/331;H01L21/74;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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